This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
SSSMini3-F1 Package
2SC5846
Silicon NPN epitaxial planar type
For general amplification
Unit: mm
+0.05
–0.02
+0.05
0.33
0.10
–0.02
■ Features
3
• High forward current transfer ratio hFE
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
+0.05
1
2
0.23
–0.02
(0.40)(0.40)
0.80 0.05
1.20 0.05
■ Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
60
50
V
7
100
V
1: Base
2: Emitter
3: Collector
mA
mA
mW
°C
Peak collector current
ICP
200
SSSMini3-F1 Package
Collector power dissipation
Junction temperature
PC
100
Marking Symbol: 7K
Tj
125
Storage temperature
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 10 µΑ, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µΑ, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
390
0.3
µA
µA
V
ICEO
hFE
180
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
2.2
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
100
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00298AED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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ucts may directly jeopardize life or harm the human body.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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